1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET.2^,3^,4 The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, ΔV_INV into voltage shifts due to oxide trapped charge, ΔV_ot and interface traps, ΔV _it. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.

Product Details

Published:

03/01/2018

Number of Pages:

7

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1 file , 170 KB